DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 771

MCU 3V 128K 100-TQFP

DF2317VTE25

Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2317VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25

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Section 17 ROM
The difference between the erasing procedures in user program mode and user boot mode depends
on whether the MAT is switched or not as shown in figure 17.74.
MAT switching is enabled by writing a specific value to FMATS. However note that while the
MATs are being switched, the LSI is in an unstable state, e.g. access to a MAT is not allowed until
MAT switching is completed finished, and if an interrupt occurs, from which MAT the interrupt
vector is read from is undetermined. Perform MAT switching in accordance with the description
in section 17.27, Switching between User MAT and User Boot MAT.
Except for MAT switching, the erasing procedure is the same as that in user program mode.
The area that can be executed in the steps of the user procedure program (on-chip RAM, user
MAT, and external space) is shown in section 17.29.3, Procedure Program and Storable Area for
Programming Data.
Rev.7.00 Feb. 14, 2007 page 737 of 1108
REJ09B0089-0700

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