DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 879
![MCU 3V 128K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2317VTE25V
Manufacturer:
AD
Quantity:
3 643
Company:
Part Number:
DF2317VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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(2) Control Signal Timing
Table 20.14 Control Signal Timing
Condition B: V
Item
RES setup time
RES pulse width
NMI setup time
NMI hold time
NMI pulse width (in recovery from
software standby mode)
IRQ setup time
IRQ hold time
IRQ pulse width (in recovery from
software standby mode)
0 V, φ = 2 MHz to 25 MHz, T
T
a
CC
= –40°C to 85°C (wide-range specifications)
= 3.0 V to 3.6 V, AV
Symbol
t
t
t
t
t
t
t
t
CC
RESS
RESW
NMIS
NMIH
NMIW
IRQS
IRQH
IRQW
= 3.0 V to 3.6 V, V
a
= –20°C to 75°C (regular specifications),
Min
200
20
150
10
200
150
10
200
Rev.7.00 Feb. 14, 2007 page 845 of 1108
Section 20 Electrical Characteristics
ref
Max
—
—
—
—
—
—
—
—
= 3.0 V to AV
Unit
ns
t
ns
ns
ns
ns
ns
ns
cyc
CC
REJ09B0089-0700
Test Conditions
Figure 20.4
Figure 20.5
, V
SS
= AV
SS
=
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