DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 759

• Manufacturer Part Number: DF2317VTE25
• Description: MCU 3V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2317VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2317VTE25; HD64F2317VTE25

On-Chip RAM Address Map when Programming/Erasing Is Executed: Parts of the procedure
program that are made by the user, like download request, programming/erasing procedure, and
judgement of the result, must be executed in the on-chip RAM. The on-chip program that is to be
downloaded is all in the on-chip RAM. Note that area in the on-chip RAM must be controlled so
that these parts do not overlap.
Figure 17.69 shows the program area to be downloaded.
Area to be downloaded
(Size: 4 kbytes)
Unusable area in
programming/erasing
processing period
Figure 17.69 RAM Map when Programming/Erasing is Executed
DPFR (Return value: 1 byte)
Initialization + programming
Programming/erasing entry
Initialization process entry
program or Initialization +
RAM emulation area
or area that can be
System use area
<On-chip RAM>
Area that can be
Area that can be
Area that can be
erasing program
used by user
used by user
used by user
used by user
(15 bytes)
Rev.7.00 Feb. 14, 2007 page 725 of 1108
Address
RAMTOP(H'FFBC00)
FTDAR setting
FTDAR setting+16
FTDAR setting+32
FTDAR setting+4k
H'FFDC00
H'FFEC00
RAMEND(H'FFFBFF)
REJ09B0089-0700
Section 17 ROM