YLCDRSK2378 Renesas Electronics America, YLCDRSK2378 Datasheet - Page 927

KIT DEV EVAL H8S/2378 LCD

YLCDRSK2378

Manufacturer Part Number
YLCDRSK2378
Description
KIT DEV EVAL H8S/2378 LCD
Manufacturer
Renesas Electronics America
Series
H8®r
Datasheet

Specifications of YLCDRSK2378

Main Purpose
Displays, LCD Controller
Embedded
Yes, MCU, 16-Bit
Utilized Ic / Part
YLCDRSK2378
Primary Attributes
5.7" QVGA, Touch Screen
Secondary Attributes
Source Code on CD, Debugging Requires Emulator Cable E10A USB/JTAG
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
φ
V
MD2 to MD0
RES
SWE bit
CC
Notes: 1. When entering boot mode or making a transition from boot mode to another mode, mode switching must be
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)*
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations prohibited)
2. When making a transition from boot mode to another mode, a mode programming setup time t
3. See section 26.1.6, Flash Memory Characteristics.
4. Wait time: 100 μs
carried out by means of RES input. The state of ports with multiplexed address functions and bus control output
pins (AS, RD, HWR, LWR) will change during this switchover interval (the interval during which the RES pin
input is low), and therefore these pins should not be used as output signals during this time.
ns is necessary with respect to RES clearance timing.
t
(Example: Boot Mode → User Mode ↔ User Program Mode)
OSC1
Mode
change
t
SWE
set
MDS
*
1
Wait time: x
Programming/erasing
possible
Figure 20.10 Mode Transition Timing
Boot
mode
3
*
4
SWE
cleared
Mode
change
t
RESW
t
MDS
*
*
1
Section 20 Flash Memory (0.35-μm F-ZTAT Version)
2
Wait time: x
Programming/erasing
possible
User
mode
User
program
mode
Rev.7.00 Mar. 18, 2009 page 859 of 1136
*
User
mode
4
Wait time: x
Programming/erasing
possible
User
program
mode
*
4
User mode
REJ09B0109-0700
MDS
Wait time: x
Programming/erasing
possible
User
program
mode
(min.) of 200
*
4

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