YLCDRSK2378 Renesas Electronics America, YLCDRSK2378 Datasheet - Page 271

KIT DEV EVAL H8S/2378 LCD

YLCDRSK2378

Manufacturer Part Number
YLCDRSK2378
Description
KIT DEV EVAL H8S/2378 LCD
Manufacturer
Renesas Electronics America
Series
H8®r
Datasheet

Specifications of YLCDRSK2378

Main Purpose
Displays, LCD Controller
Embedded
Yes, MCU, 16-Bit
Utilized Ic / Part
YLCDRSK2378
Primary Attributes
5.7" QVGA, Touch Screen
Secondary Attributes
Source Code on CD, Debugging Requires Emulator Cable E10A USB/JTAG
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
6.6.11
With DRAM, in addition to full access (normal access) in which data is accessed by outputting a
row address for each access, a fast page mode is also provided which can be used when making
consecutive accesses to the same row address. This mode enables fast (burst) access of data by
simply changing the column address after the row address has been output. Burst access can be
selected by setting the BE bit to 1 in DRAMCR.
Burst Access (Fast Page Mode): Figures 6.30 and 6.31 show the operation timing for burst
access. When there are consecutive access cycles for DRAM space, the CAS signal and column
address output cycles (two states) continue as long as the row address is the same for consecutive
access cycles. The row address used for the comparison is set with bits MXC2 to MXC0 in
DRAMCR.
Burst Operation
(Address shift size
set to 10 bits)
This LSI
Figure 6.29 Example of 2-CAS DRAM Connection
RASn (CSn)
HWR (WE)
D15 to D0
RD (OE)
UCAS
LCAS
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
Rev.7.00 Mar. 18, 2009 page 203 of 1136
1-Mbyte × 16-bit configuration
RAS
UCAS
LCAS
WE
OE
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
D15 to D0
2-CAS type 16-Mbit DRAM
10-bit column address
Section 6 Bus Controller (BSC)
Row address input:
A9 to A0
Column address input:
A9 to A0
REJ09B0109-0700

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