DF2367VF33 Renesas Electronics America, DF2367VF33 Datasheet - Page 829

MCU 3V 384K 128-QFP

DF2367VF33

Manufacturer Part Number
DF2367VF33
Description
MCU 3V 384K 128-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2367VF33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2367VF33
HD64F2367VF33

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8. When the data storable area indicated by programming parameter FMPDR is within the flash
In consideration of these conditions, there are three factors; operating mode, the bank structure of
the user MAT, and operations.
The areas in which the programming data can be stored for execution are shown in tables.
Table 20.7 Executable MAT
Note:
Operation
Programming
Erasing
memory area, an error will occur even when the data stored is normal. Therefore, the data
should be transferred to the on-chip RAM to place the address that FMPDR indicates in an
area other than the flash memory.
*
Programming/Erasing is possible to user MATs.
Initiated Mode
User Program Mode
Table 20.8 (1)
Table 20.8 (2)
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
Rev.6.00 Mar. 18, 2009 Page 769 of 980
User Boot Mode*
Table 20.8 (3)
Table 20.8 (4)
REJ09B0050-0600

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