DF2367VF33 Renesas Electronics America, DF2367VF33 Datasheet - Page 774

MCU 3V 384K 128-QFP

DF2367VF33

Manufacturer Part Number
DF2367VF33
Description
MCU 3V 384K 128-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2367VF33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2367VF33
HD64F2367VF33

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Section 19 Flash Memory (0.35-μm F-ZTAT Version)
Rev.6.00 Mar. 18, 2009 Page 714 of 980
REJ09B0050-0600
Notes: 1. Except when switching modes, the level of the mode pins (MD2 to MD0) must be fixed until
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
φ
V
MD2 to MD0
RES
SWE bit
φ
V
MD2 to MD0
RES
SWE bit
CC
CC
2. See section 25.2.5, Flash Memory Characteristics.
3. Mode programming setup time t
power-off by pulling the pins up or down.
*
*
1
1
Figure 19.9 Power-On/Off Timing
t
OSC1
t
OSC1
t
MDS
Wait time: x
*
SWE set
Wait time: x
t
SWE set
2
MDS
*
MDS
3
*
3
(1) Boot Mode
(2) User Program Mode
(min) = 200 ns
Programming/
erasing
possible
Programming/
erasing
possible
Wait time: 100 μs
Wait time: 100 μs
SWE cleared
SWE cleared
Min 0 μs
Min 0 μs

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