DF2367VF33 Renesas Electronics America, DF2367VF33 Datasheet - Page 769

MCU 3V 384K 128-QFP

DF2367VF33

Manufacturer Part Number
DF2367VF33
Description
MCU 3V 384K 128-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2367VF33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2367VF33
HD64F2367VF33

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2367VF33V
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
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Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
DF2367VF33WV
Manufacturer:
Renesas Electronics America
Quantity:
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Notes: 1. Prewriting (setting erase block data to all 0) is not necessary.
2. The values of x, y, z, α, β, γ, ε, η, θ, and N are shown in section 25.2.5, Flash Memory Characteristics.
3. Verify data is read in 16-bit (W) units.
4. Set only one bit in EBR1or EBR2. More than one bit cannot be set.
5. Erasing is performed in block units. To erase a number of blocks, the individual blocks must be erased sequentially.
Increment
address
NG
Figure 19.8 Erase/Erase-Verify Flowchart
NG
Set block start address to verify address
H'FF dummy write to verify address
*5
Clear ESU bit in FLMCR1
Clear SWE bit in FLMCR1
Set SWE bit in FLMCR1
Set ESU bit in FLMCR1
Clear EV bit in FLMCR1
Clear E bit in FLMCR1
Set EV bit in FLMCR1
Last address of block?
Set E bit in FLMCR1
erasing of all erase
Verify data = all 1?
Set EBR1, EBR2
Read verify data
End of erasing
Disable WDT
Enable WDT
Wait (α) μs
Wait (x) μs
Wait (y) μs
Wait (z) μs
Wait (β) μs
Wait (η) μs
Wait (θ) μs
Wait (γ) μs
Wait (ε) μs
blocks?
End of
n = 1
Start
OK
OK
OK
*1
Section 19 Flash Memory (0.35-μm F-ZTAT Version)
*2
NG
*2
*2
*4
*2
Start of erase
*2
Halt erase
*2
*2
*2
*2
*3
Rev.6.00 Mar. 18, 2009 Page 709 of 980
Clear SWE bit in FLMCR1
Clear EV bit in FLMCR1
Erase failure
Wait (η) μs
Wait (θ) μs
n ≥ N?
OK
*2
REJ09B0050-0600
NG
*2
n ← n + 1
*2

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