DF2367VF33 Renesas Electronics America, DF2367VF33 Datasheet - Page 228

• Manufacturer Part Number: DF2367VF33
• Description: MCU 3V 384K 128-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2367VF33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2367VF33; HD64F2367VF33

Section 6 Bus Controller (BSC)
6.6.5
Figure 6.20 shows the basic access timing for DRAM space.
The four states of the basic timing consist of one T
output cycle) state, and the T
When DRAM space is accessed, the RD signal is output as the OE signal for DRAM. When
connecting DRAM provided with an EDO page mode, the OE signal should be connected to the
(OE ) pin of the DRAM. Setting the OEE bit to 1 in DRAMCR enables the OE signal for DRAM
space to be output from a dedicated OE pin. In this case, the OE signal for DRAM space is output
Rev.6.00 Mar. 18, 2009 Page 168 of 980
REJ09B0050-0600
Read
Write
Note: n = 2, 3
Basic Timing
Figure 6.20 DRAM Basic Access Timing (RAST = 0, CAST = 0)
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
c1
and two T
T
p
c2
Row address
(column address output cycle) states.
High
High
p
T
(precharge cycle) state, one T
r
T
c1
Column address
T
c2
r
(row address