ATMEGA8HVD-4MX Atmel, ATMEGA8HVD-4MX Datasheet - Page 146

no-image

ATMEGA8HVD-4MX

Manufacturer Part Number
ATMEGA8HVD-4MX
Description
MCU AVR 8K FLASH 2.1-8V 4MHZ QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheet

Specifications of ATMEGA8HVD-4MX

Core Processor
AVR
Core Size
8-Bit
Speed
4MHz
Peripherals
POR, WDT
Number Of I /o
5
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 2.4 V
Data Converters
A/D 1x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
18-MLF® Exposed Pad (Staggered Leads), DFN
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK500 - PROGRAMMER AVR STARTER KIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Connectivity
-
Table 26-6.
Notes:
146
Parameter
VFET DC level
VFET ripple
OC, OD clamping
voltage
OC, OD
OC, OD
Risetime
(OC, OD, 0 - 90 %)
Falltime
(OC, OD, 100 - 10 %)
1. All DC Characteristics contained in this data sheet are based on simulation and characterization of other AVR microcon-
2. These numbers assume the use of one external N-channel FET of model TPCS8210. If other FETs are used, the numbers
3. VFET = 4V, I
(2)
(3)
(2)
ATmega4HVD/8HVD
trollers manufactured in the same process technology. These values are preliminary values representing design targets, and
will be updated after characterization of actual silicon.
may deviate somewhat. The equivalent capacitive loads at OC and OD are around 1.2 nF. Rise and fall times scales approx-
imately proportional to the capacitive loading.
(2)
FET Driver Outputs specification
(2)
load
= 500 nA.
Condition
1 cell DUVR operation
1 cell DUVR operation
Normal ON operation
Normal OFF operation
Normal ON operation
Normal OFF operation
(1)
, T
A
= -20°C to 85°C, VFET = 2.4 to 4.2V (unless otherwise noted)
VFET+2.5
Min.
2.0
VFET+ 5
±0.05
Typ.
TBD
2.3
0.0
0.5
5
VFET+ 7
Max.
2.5
0.1
10
10
8052B–AVR–09/08
Units
ms
µs
V
V
V
V
V

Related parts for ATMEGA8HVD-4MX