ATMEGA8HVD-4MX Atmel, ATMEGA8HVD-4MX Datasheet - Page 121

• Manufacturer Part Number: ATMEGA8HVD-4MX
• Description: MCU AVR 8K FLASH 2.1-8V 4MHZ QFN
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA8HVD-4MX

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 4MHz
• Peripherals: POR, WDT
• Number Of I /o: 5
• Program Memory Size: 8KB (4K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 2.4 V
• Data Converters: A/D 1x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 18-MLF® Exposed Pad (Staggered Leads), DFN
• For Use With: ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK500 - PROGRAMMER AVR STARTER KIT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Connectivity: -

23. Self-Programming the Flash
23.1
23.2
23.3
8052B–AVR–09/08
Overview
Performing Page Erase by SPM
Filling the Temporary Buffer (Page Loading)
In ATmega4HVD/8HVD, there is no Read-While-Write support, and no separate Boot Loader
Section. The SPM instruction can be executed from the entire Flash.
The device provides a Self-Programming mechanism for downloading and uploading program
code by the MCU itself. The Self-Programming can use any available data interface and asso-
ciated protocol to read code and write (program) that code into the Program memory.
The Program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page
buffer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
Alternative 1, fill the buffer before a Page Erase
• Fill temporary page buffer
• Perform a Page Erase
• Perform a Page Write
Alternative 2, fill the buffer after Page Erase
• Perform a Page Erase
• Fill temporary page buffer
• Perform a Page Write
If only a part of the page needs to be changed, the rest of the page must be stored (for exam-
ple in the temporary page buffer) before the erase, and then be re-written. When using
alternative 1, the Boot Loader provides an effective Read-Modify-Write feature which allows
the user software to first read the page, do the necessary changes, and then write back the
modified data. If alternative 2 is used, it is not possible to read the old data while loading since
the page is already erased. The temporary page buffer can be accessed in a random
sequence. It is essential that the page address used in both the Page Erase and Page Write
operation is addressing the same page.
To execute Page Erase, set up the address in the Z-pointer, write “00000011” to SPMCSR
and execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is
ignored. The page address must be written to PCPAGE in the Z-register. Other bits in the Z-
pointer will be ignored during this operation.
• The CPU is halted during the Page Erase operation.
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001” to SPMCSR and execute SPM within four clock cycles after writing SPMCSR. The
content of PCWORD in the Z-register is used to address the data in the temporary buffer. The
temporary buffer will auto-erase after a Page Write operation or by writing the RWWSRE bit in
SPMCSR. It is also erased after a system reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer. If the EEPROM is written in the
middle of an SPM Page Load operation, all data loaded will be lost.
ATmega4HVD/8HVD
121