R5F21162SP#U0 Renesas Electronics America, R5F21162SP#U0 Datasheet - Page 237

• Manufacturer Part Number: R5F21162SP#U0
• Description: IC R8C MCU FLASH 8K 20SSOP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/R8C/Tiny/16r

Specifications of R5F21162SP#U0

• Core Processor: R8C
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SIO, UART/USART
• Peripherals: LED, POR, Voltage Detect, WDT
• Number Of I /o: 13
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 20-SSOP
• For Use With: R0K521134S000BE - KIT EVAL STARTER FOR R8C/13
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/16 Group, R8C/17 Group
Rev.2.10
REJ09B0169-0210
Table 19.4
NOTES:
−
−
−
t
−
−
−
−
−
d(SR-ES)
Symbol
1. V
2. Definition of program and erase
3. Endurance to guarantee all electrical characteristics after program and erase.(1 to “Min.” value can be guaranateed).
4. In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram
5. If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
6. Customers desiring Program/Erase failure rate information should contact their Renesas technical support representative.
7. The data hold time incudes time that the power supply is off or the clock is not supplied.
The program and erase endurance shows an erase endurance for every block.
If the program and erase endurance is “n” times (n = 100, 10000), “n” times erase can be performed for every block.
For example, if performing 1-byte write to the distinct addresses on Block A of 1Kbyte block 1,024 times and then erasing that
block, program and erase endurance is counted as one time.
However, do not perform multiple programs to the same address for one time ease.(disable overwriting).
endurance not to leave blank area as possible such as programming write addresses in turn. If programming a set of 16
bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. Additionally,
averaging erase endurance for Block A and B can reduce effective reprogram endurance more. To leave erase endurance for
every block as information and determine the restricted endurance are recommended.
least three times until the erase error does not occur.
CC
Jan 19, 2006
= AVcc = 2.7 to 5.5V at T
Program/Erase Endurance
Byte Program Time
Block Erase Time
Time Delay from Suspend Request until
Erase Suspend
Erase Suspend Request Interval
Program, Erase Voltage
Read Voltage
Program, Erase Temperature
Data Hold Time
Flash Memory (Program ROM) Electrical Characteristics
Page 222 of 254
(7)
Parameter
opr
= 0 to 60 ° C, unless otherwise specified.
(2)
R8C/16 Group
R8C/17 Group
V
V
Ambient temperature = 55 ° C
CC
CC
= 5.0 V at T
= 5.0 V at T
Conditions
opr
opr
= 25 ° C
= 25 ° C
1,000
100
Min.
2.7
2.7
10
20
−
−
−
0
19. Electrical Characteristics
(3)
(3)
Standard
Typ.
0.4
50
−
−
−
−
−
−
−
−
Max.
400
5.5
5.5
60
9
8
−
−
−
−
times
times
year
Unit
ms
ms
µ s
° C
V
V
s