R5F21162SP#U0 Renesas Electronics America, R5F21162SP#U0 Datasheet - Page 209

• Manufacturer Part Number: R5F21162SP#U0
• Description: IC R8C MCU FLASH 8K 20SSOP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/R8C/Tiny/16r

Specifications of R5F21162SP#U0

• Core Processor: R8C
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SIO, UART/USART
• Peripherals: LED, POR, Voltage Detect, WDT
• Number Of I /o: 13
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 20-SSOP
• For Use With: R0K521134S000BE - KIT EVAL STARTER FOR R8C/13
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/16 Group, R8C/17 Group
Rev.2.10
REJ09B0169-0210
18. Flash Memory Version
18.1
Table 18.1
NOTES:
Flash Memory Operating Mode
Division of Erase Block
Program Method
Erase Method
Program, Erase Control Method
Rewrite Control Method
Number of Commands
Program and
Erase
Endurance
ID Code Check Function
ROM Code Protect
In the flash memory version, rewrite operations to the flash memory can be performed in three modes ;
CPU rewrite, standard serial I/O, parallel I/O modes.
Table 18.1 lists the Flash Memory Version Performance (refer to Table 1.1 Performance Outline of the
R8C/16 Group and Table 1.2 Performance Outline of the R8C/17 Group for the items not listed on Table
18.1).
1. Definition of program and erase endurance.
2. Blocks A and B are embedded only in the R8C/17 group.
The program and erase endurance is defined to be per-block. When the program and erase
endurance is n times (n=100 or 10,000 times), to erase n times per block is possible. For example, if
performing one-byte write to the distinct addresses on Block A of 1K-byte block 1,024 times and
then erasing that block, the program and erase endurance is counted as one time. If rewriting more
than 100 times, execute the program until the blank areas are all used to reduce the substantial
rewrite endurance and then erase. Do not rewrite only particular blocks and rewrite to average the
program and erase endurance to each block. Also keep the erase endurance as information and set
up the limit endurance.
Overview
Jan 19, 2006
(1)
Flash Memory Version Performance
Item
Block0 and 1
(Program ROM)
BlockA and B
(Data flash)
Page 194 of 254
(2)
3 modes (CPU rewrite, standard serial I/O, and parallel I/O mode)
Refer to Figures 18.1 and Figure 18.2
Byte unit
Block erase
Program and erase control by software command
Rewrite control for Block 0 and 1 by FMR02 bit in FMR0 register
Rewrite control for Block 0 by FMR16 bit and Block 1 by FMR16 bit
5 commands
R8C/16 Group : 100 times ; R8C/17 Group : 1,000 times
10,000 times
Standard serial I/O mode supported
For parallel I/O mode supported
Specification
18. Flash Memory Version