DF2266TF13V Renesas Electronics America, DF2266TF13V Datasheet - Page 671
![IC H8S/2266 MCU FLASH 100-TQFP](/photos/12/29/122926/df2266tf13v_sml.jpg)
DF2266TF13V
Manufacturer Part Number
DF2266TF13V
Description
IC H8S/2266 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet
1.DF2266TF20V.pdf
(712 pages)
Specifications of DF2266TF13V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
13MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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25.2.8
Table 25.13 shows the flash memory characteristics.
Table 25.13 Flash Memory Characteristics
Condition: V
Item
Programming time *
Erase time *
Count of rewriting
Data retention time
Programming Wait time after SWE1 bit setting *
Erase
Flash Memory Characteristics
1
T
specification)
*
3
a
CC
*
= –25°C to +75°C (Programming/erasing operating temperature range: regular
Wait time after PSU1 bit setting *
Wait time after P1 bit setting *
Wait time after P1 bit clear *
Wait time after PSU1 bit clear *
Wait time after PV1 bit setting *
Wait time after H'FF dummy write *
Wait time after PV1 bit clear *
Wait time after SWE1 bit clear
Maximum programming count *
Wait time after SWE1 bit setting *
Wait time after ESU1 bit setting *
Wait time after E1 bit setting *
Wait time after E1 bit clear *
Wait time after ESU1 bit clear *
Wait time after EV1 bit setting *
Wait time after H'FF dummy write *
Wait time after EV1 bit clear *
Wait time after SWE1 bit clear
Maximum erase count *
5
= 3.0 V to 5.5 V, AV
1
*
2
*
4
1
*
5
CC
1
1
= 2.7 V to 5.5 V, V
1
1
1
1
*
*
1
1
1
1
1
5
4
*
1
1
4
1
1
1
1
Symbol Min.
t
t
N
T
t
t
t
t
t
t
t
t
t
t
t
N1
N2
t
t
t
t
t
t
t
t
t
N
p
E
sswe
spsu
sp10
sp30
sp200
cp
cpsu
spv
spvr
cpv
cswe
sswe
sesu
se
ce
cesu
sev
sevr
cev
cswe
DRP
WEC
*
8
⎯
⎯
100 *
10
1
50
8
28
198
5
4
2
2
100
⎯
⎯
⎯
1
100
10
10
10
20
2
4
100
⎯
Rev. 5.00 Sep. 01, 2009 Page 619 of 656
ref
6
= 2.7 V to AV
Section 25 Electrical Characteristics
Typ.
30
100
10000 *
⎯
1
50
10
30
200
5
4
2
2
100
⎯
⎯
⎯
1
100
10
10
10
20
2
4
100
⎯
7
Max. Unit
200
1200 ms/block
⎯
⎯
⎯
⎯
12
32
202
⎯
⎯
⎯
⎯
⎯
⎯
6 *
994 *
⎯
⎯
100
⎯
⎯
⎯
⎯
⎯
⎯
100
4
CC
4
, V
ms/
128 bytes
Times
μs
μs
μs
μs
μs
μs
Times
Times
μs
μs
ms
μs
μs
μs
Year
μs
μs
μs
μs
μs
μs
μs
μs
Times
SS
REJ09B0071-0500
= AV
SS
Test
Condition
6 ≥ n ≥ 1
1000 ≥ n ≥ 7
= 0 V,
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