DF2266TF13V Renesas Electronics America, DF2266TF13V Datasheet - Page 589

IC H8S/2266 MCU FLASH 100-TQFP

DF2266TF13V

Manufacturer Part Number
DF2266TF13V
Description
IC H8S/2266 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet

Specifications of DF2266TF13V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
13MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
φ
V
FWE
MD2, MD1
RES
SWE1 bit
CC
Notes:
Period during which flash memory access is prohibited
(t
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations prohibited)
1.
2.
3.
4.
sswe
When entering boot mode or making a transition from boot mode to another mode, mode switching must be
carried out by means of RES input.
When making a transition from boot mode to another mode, a mode programming setup time t
ns is necessary with respect to RES clearance timing.
See section 25.2.8, Flash Memory Characteristics.
Wait time: 100µs.
: Wait time after setting SWE1 bit) *
(Example: Boot Mode → User Mode ↔ User Program Mode)
t
OSC1
SWE1 set
Mode
change
t
MDS
t
MDS
*
Figure 20.15 Mode Transition Timing
1
Boot
mode
3
*
4
SWE1
cleared
Mode
change
t
RESW
min 0µs
t
MDS
*
*
1
2
User
mode
Rev. 5.00 Sep. 01, 2009 Page 537 of 656
User program mode
*
4
*
4
User
mode
REJ09B0071-0500
Section 20 ROM
MDS
User program
mode
(min.) of 200

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