DF2266TF13V Renesas Electronics America, DF2266TF13V Datasheet - Page 575

• Manufacturer Part Number: DF2266TF13V
• Description: IC H8S/2266 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2266TF13V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 13MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 67
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

An example in which flash memory block area EB0 is overlapped is shown in figure 20.9.
1. The RAM area to be overlapped is fixed at a 4-kbyte area in the range H'FFD000 to
2. The flash memory area to be overlapped is selected by RAMER from a 4-kbyte area of the
3. The overlapped RAM area can be accessed from both the flash memory addresses and RAM
4. When the RAMS bit in RAMER is set to 1, program/erase protection is enabled for all flash
5. A RAM area cannot be erased by execution of software in accordance with the erase
6. Block area EB0 contains the vector table. When performing RAM emulation, the vector table
H'FFDFFF. In the H8S/2265, the RAM in this area is enabled only in RAM emulation mode.
EB0 to EB7 blocks.
addresses.
memory blocks (emulation protection). In this state, setting the P1 or E1 bit in FLMCR1 to 1
does not cause a transition to program mode or erase mode.
algorithm.
is needed in the overlap RAM.
Rev. 5.00 Sep. 01, 2009 Page 523 of 656
REJ09B0071-0500
Section 20 ROM