DF2266TF13V Renesas Electronics America, DF2266TF13V Datasheet - Page 566

• Manufacturer Part Number: DF2266TF13V
• Description: IC H8S/2266 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2266TF13V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 13MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 67
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 20 ROM
20.5.3
EBR1 specifies the flash memory erase area block. EBR1 is initialized to H'00 when the SWE1 bit
in FLMCR1 is 0. Do not set more than one bit at a time, as this will cause all the bits in EBR1 and
EBR2 to be automatically cleared to 0.
Rev. 5.00 Sep. 01, 2009 Page 514 of 656
REJ09B0071-0500
7
Bit
6
5
4
3
2
1
0
Bit Name
EB7
EB6
EB5
EB4
EB3
EB2
EB1
EB0
Erase Block Register 1 (EBR1)
Initial
Value
0
0
0
0
0
0
0
0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
Description
When this bit is set to 1, 4 kbytes of EB7 (H'007000 to
H'007FFF) will be erased.
When this bit is set to 1, 4 kbytes of EB6 (H'006000 to
H'006FFF) will be erased.
When this bit is set to 1, 4 kbytes of EB5 (H'005000 to
H'005FFF) will be erased.
When this bit is set to 1, 4 kbytes of EB4 (H'004000 to
H'004FFF) will be erased.
When this bit is set to 1, 4 kbytes of EB3 (H'003000 to
H'003FFF) will be erased.
When this bit is set to 1, 4 kbytes of EB2 (H'002000 to
H'002FFF) will be erased.
When this bit is set to 1, 4 kbytes of EB1 (H'001000 to
H'001FFF) will be erased.
When this bit is set to 1, 4 kbytes of EB0 (H'000000 to
H'000FFF) will be erased.