DF2266TF13V Renesas Electronics America, DF2266TF13V Datasheet - Page 661

IC H8S/2266 MCU FLASH 100-TQFP

DF2266TF13V

Manufacturer Part Number
DF2266TF13V
Description
IC H8S/2266 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet

Specifications of DF2266TF13V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
13MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Table 25.4 Bus Drive Characteristics (1)
Condition A (F-ZTAT version): V
Note:
Item
Schmitt trigger input
voltage
Input high voltage
Input low voltage
Output low voltage
Input capacitance
Three-state leakage
current (off state)
SDL, SDA output fall time
If the A/D and D/A converters and DTMF generation circuit are not used, do not leave the
AVCC, Vref, and AVSS pins open. Apply a voltage 2.0 V to 5.5 V to the AVCC and Vref
pins by connecting them to V
V
+85°C (wide-range specifications) *
SS
= AV
SS
= 0 V, T
Symbol
VT
VT
VT
V
V
V
C
| l
t
Of
IH
IL
OL
IN
STI
+
+
|
- VT
a
CC
= –20°C to +75°C (regular specifications), T
= 3.0 V to 5.5 V, AV
CC
, for instance. Set V
Min.
V
0.4
V
V
-0.5
20 +
0.1 Cb
CC
CC
CC
× 0.3
× 0.05
× 0.7
1
, Target pins: SCL1, SCL0, SDA1, SDA0
Typ.
Rev. 5.00 Sep. 01, 2009 Page 609 of 656
CC
ref
≤ AV
= 2.7 V to 5.5 V, V
Max.
V
V
V
0.5
0.4
20
1.0
250
Section 25 Electrical Characteristics
CC
CC
CC
× 0.7
+ 0.5
× 0.3
CC
Unit
V
V
V
V
pF
μA
ns
a
ref
REJ09B0071-0500
Test Conditions
V
V
V
= –40°C to
I
V
I
VIN = 0 V, f = 1
MHz, T
OL
OL
= 2.7 V to AV
CC
CC
IN
CC
= 4.0 to 5.5 V
= 8 mA,
= 3 mA
= 0.5 to V
= 3.0 to 4.0 V
= 4.0 to 5.5 V
a
= 25°C
CC
-0.5
CC
,

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