ATAVRSB202 Atmel, ATAVRSB202 Datasheet - Page 233

• Manufacturer Part Number: ATAVRSB202
• Description: KIT BATT MGMT FOR ATMEGA32HVB
• Manufacturer: Atmel

Specifications of ATAVRSB202

• Main Purpose: *
• Embedded: *
• Utilized Ic / Part: *
• Primary Attributes: *
• Secondary Attributes: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

32.7
32.7.1
Table 32-6.
Notes:
8042B–AVR–06/10
Parameter
Conversion Time
Resolution
Gain ADC0/1 (Un-scaled)
Gain Cell Inputs (x0.2)
INL
Input Voltage range ADC0, ADC1, VTEMP
Input Voltage range CELL1
Input Voltage range CELL2
Input Voltage range CELL3
Input Voltage range CELL4
Offset drift
Gain drift
(2)
3. The measured V
ADC Characteristics
1. Value is after Atmel factory offset and gain compensation in production (for details, see
2. Value not tested in production but guarantied by design and characterization.
(1)(2)
Voltage ADC Characteristics
(1)(2)
absolute temperature. The design target accuracy for this parameter assumes an exact calibration temperature. Actual
accuracy of this parameter after calibration in Atmel factory test remains to be determined.
Addressing.,” on page
T
A
= -40 to 85°C unless otherwise noted.
PTAT
voltage must be scaled with the calibration value stored in the V
199) and it includes drift over the whole temperature range.
Condition
clk
ADC0, ADC1
CELL1, CELL2, CELL3
CELL4
V
V
V
ADC0, ADC1
CELL1, CELL2, CELL3
CELL4
ADC0, ADC1
CELL1, CELL2, CELL3
CELL4
PV1-GND
PV2-GND
PV3-GND
VADC
= 1 MHz
>1.8V
>1.8V
>1.8V
ATmega16HVB/32HVB
Min
1.8
0
0
0
0
PTAT
Table 29-3, “Signature Row
Calibration Register to get the
1.42
Typ
519
263
12
±1
±1
±2
15
1
1
5
6
7
Max
±3
±5
±3
1
5
5
5
5
mV/LSB
μV/LSB
LSB
LSB
LSB
Unit
Bits
μs
V
233