mc68hc912dg128 Freescale Semiconductor, Inc, mc68hc912dg128 Datasheet - Page 118

• Manufacturer Part Number: mc68hc912dg128
• Description: M68hc12 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

Flash Memory
7.9 Programming the Flash EEPROM
Technical Data
118
Programming the Flash EEPROM is accomplished by the following
sequence. The V
executing step 4 the first time.
The flowchart in
programming sequence.
10. If the location is programmed, repeat the same number of pulses
11. Read the address location to verify that it remains programmed.
12. Clear LAT.
13. If there are more locations to program, repeat steps 2 through 10.
14. Turn off V
1. Apply program/erase voltage to the V
2. Set the PPAGE to point to the 16K Flash window to be
3. Write data to a valid address. The address and data is latched. If
4. Apply programming voltage by setting ENPE.
5. Delay for one programming pulse (t
6. Remove programming voltage by clearing ENPE.
7. Delay while high voltage is turning off (t
8. Read the address location to verify that it has been programmed
9. If the location is not programmed, repeat steps 4 through 7 until
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programmed and corresponding register block. Clear ERAS and
set the LAT bit in the FEECTL register to establish program mode
and enable programming address and data latches.
BOOTP is asserted, an attempt to program an address in the boot
block will be ignored.
the location is programmed or until the specified maximum
number of program pulses has been reached (n
as required to program the location. This provides 100% program
margin.
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FP
Figure 7-1
FP
Flash Memory
(reduce voltage on V
pin voltage must be at the proper level prior to
demonstrates the recommended
FP
PPULSE
pin to V
FP
MC68HC912DG128 — Rev 3.0
VPROG
pin.
).
DD
).
).
PP
)
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