DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 533

• Manufacturer Part Number: DF2110BVTE10
• Description: MCU 3V 64K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2110BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2110BVTE10; HD64F2110BVTE10

Table 21.4 Bus Drive Characteristics
Conditions:
Applicable Pins: SCL1, SCL0, SDA1, SDA0 (bus drive function selected)
Item
Schmitt trigger
input voltage
Input high voltage
Input low voltage
Output low voltage
Input capacitance
Three-state leakage
current (off state)
SCL, SDA output
fall time
Conditions:
Applicable Pins: PS2AC, PS2AD, PS2BC, PS2BD, PS2CC, PS2CD, PA7 to PA4 (bus drive
Item
Output low voltage
V
V
function selected)
CC
CC
Symbol
V
V
V
V
V
V
C
| I
t
Of
= 3.0 V to 3.6 V, V
= 3.0 V to 3.6 V, V
Symbol
V
T
T
T
IH
IL
OL
in
TSI
–
+
+
OL
– V
|
T
–
Min
V
—
V
V
–0.5
—
—
—
—
20 + 0.1Cb —
Min
—
—
—
CC
CC
CC
0.3
0.05
0.7
SS
CC
B = 3.0 V to 5.5 V, V
= 0 V, Ta = –20 to +75°C
Typ
—
—
—
Typ
—
—
—
—
—
—
—
—
—
Max
0.8
0.5
0.4
Max
—
V
—
5.5
V
0.5
0.4
20
1.0
250
Rev. 2.00 Mar 21, 2006 page 493 of 518
CC
CC
0.7
0.3
Section 21 Electrical Characteristics
Unit
V
SS
= 0 V, Ta = –20 to +75°C
Unit
V
V
V
pF
µA
ns
Test Conditions
I
V
I
I
OL
OL
OL
CC
= 16 mA,
= 8 mA
= 3 mA
Test Conditions
V
V
V
V
V
I
I
V
T
V
V
B = 4.5 V to 5.5 V
OL
OL
a
CC
CC
CC
CC
CC
in
in
CC
= 25°C
= 8 mA
= 3 mA
= 0 V, f = 1 MHz,
= 0.5 to V
= 3.0 V to 3.6 V
= 3.0 V to 3.6 V
= 3.0 V to 3.6 V
= 3.0 V to 3.6 V
= 3.0 V to 3.6 V
= 3.0 V to 3.6 V
REJ09B0299-0200
CC
– 0.5 V