DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 453

MCU 3V 64K 100-TQFP

DF2110BVTE10

Manufacturer Part Number
DF2110BVTE10
Description
MCU 3V 64K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2110BVTE10

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
82
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2110BVTE10
HD64F2110BVTE10

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2110BVTE10V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
1. Initial state
3. Flash memory initialization
(1) The program that will transfer the programming/erase
(2) The programming/erase control program should be
The programming/erase program in RAM is executed, and
the flash memory is initialized (to H'FF). Erasing can be
performed in block units, but not in byte units.
<This LSI>
<This LSI>
control program from flash memory to on-chip RAM
should be written into the flash memory by the user
beforehand.
prepared in the host or in the flash memory.
Transfer program
Transfer program
<Flash memory>
<Flash memory>
Flash memory
Boot program
Boot program
(old version)
Application
program
erase
erase control program
application program
application program
Programming/
<Host>
<Host>
New
New
erase control program
Figure 17.4 User Program Mode (Example)
Programming/
<RAM>
<RAM>
SCI
SCI
2. Programming/erase control program transfer
4. Writing new application program
The transfer program in the flash memory is executed and
the programming/erase control program is transferred to RAM.
Next, the new application program in the host is written into
the erased flash memory blocks. Do not write to unerased
blocks.
<This LSI>
<This LSI>
Transfer program
Transfer program
<Flash memory>
<Flash memory>
Boot program
Boot program
(old version)
Rev. 2.00 Mar 21, 2006 page 413 of 518
Application
application
program
program
New
application program
<Host>
<Host>
New
erase control program
erase control program
Programming/
Programming/
Program execution state
<RAM>
<RAM>
REJ09B0299-0200
Section 17 ROM
SCI
SCI

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