DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 447

• Manufacturer Part Number: DF2110BVTE10
• Description: MCU 3V 64K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2110BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2110BVTE10; HD64F2110BVTE10

This LSI has an on-chip high-speed static RAM. The RAM is connected to the CPU by a 16-bit
data bus, enabling one-state access by the CPU to both byte data and word data.
The on-chip RAM can be enabled or disabled by means of the RAME bit in the system control
register (SYSCR). For details on SYSCR, refer to section 3.2.2, System Control Register
(SYSCR).
Product Classification
Flash memory version
H8S/2110B
Section 16 RAM
RAM Capacitance
2 kbytes
Rev. 2.00 Mar 21, 2006 page 407 of 518
H'E880 to H'EFFF,
RAM Address
H'FF00 to H'FF7F
REJ09B0299-0200
Section 16 RAM