DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 527

• Manufacturer Part Number: DF2110BVTE10
• Description: MCU 3V 64K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2110BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2110BVTE10; HD64F2110BVTE10

21.1
21.1.1
Table 21.1 lists the absolute maximum ratings.
Table 21.1 Absolute Maximum Ratings
Caution: Permanent damage to the chip may result if absolute maximum ratings are exceeded.
Item
Power supply voltage
I/O buffer power supply voltage
Input voltage (except ports A, P97, P86, P52,
and P42)
Input voltage (Port A)
Input voltage (P97, P86, P52, P42)
Operating temperature
Operating temperature (flash memory
programming/erasing)
Storage temperature
The V
Electrical Characteristics
Absolute Maximum Ratings
Ensure so that the impressed voltage does not exceed 4.3 V for pins for which the
maximum rating is determined by the voltage on the V
for which the maximum rating is determined by V
CC
and V
Section 21 Electrical Characteristics
CL
pins must be connected to the V
Symbol
V
V
V
V
V
T
T
T
opr
opr
stg
CC
CC
in
in
in
, V
B
CL
CC
Rev. 2.00 Mar 21, 2006 page 487 of 518
CC
power supply.
B.
Section 21 Electrical Characteristics
Value
–0.3 to +4.3
–0.3 to +7.0
–0.3 to V
–0.3 to V
–0.3 to +7.0
–20 to +75
–20 to +75
–55 to +125
CC
and V
CC
CC
CL
B + 0.3
+ 0.3
pins, or 7.0 V for pins
REJ09B0299-0200
Unit
V
V
V
V
V
°C
°C
°C