DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 392
![MCU 3V 64K 100-TQFP](/photos/28/61/286108/100-tqfp_sml.jpg)
DF2110BVTE10
Manufacturer Part Number
DF2110BVTE10
Description
MCU 3V 64K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet
1.DF2110BVTE10V.pdf
(561 pages)
Specifications of DF2110BVTE10
Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
82
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2110BVTE10
HD64F2110BVTE10
HD64F2110BVTE10
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2110BVTE10V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 392 of 561
- Download datasheet (4Mb)
Section 14 Keyboard Buffer Controller
14.4.5
Figure 14.10 shows the KLCKO and KDO write timing and the KCLK and KD pin states.
Rev. 2.00 Mar 21, 2006 page 352 of 518
REJ09B0299-0200
φ
Internal write
signal
KCLKO, KDO
(register)
KCLK, KD
(pin state)
Note:*
*
KCLKO and KDO Write Timing
The
mode is active mode.
φ
clock shown here is scaled by 1/N in medium-speed mode when the operating
Figure 14.10 KCLKO and KDO Write Timing
T
1
T
2
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