DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 847

IC H8SX/1657 MCU FLASH 120TQFP

DF61657CN35FTV

Manufacturer Part Number
DF61657CN35FTV
Description
IC H8SX/1657 MCU FLASH 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of DF61657CN35FTV

Core Processor
H8SX
Core Size
32-Bit
Speed
35MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
82
Program Memory Size
768KB (768K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
3DK1657 - DEV EVAL KIT FOR H8SX/1657
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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Part Number:
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Manufacturer:
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Part Number:
DF61657CN35FTV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
22.3.3
Table 22.6 Bus Timing (1)
Conditions: V
Item
Address delay time
Address setup time 1
Address setup time 2
Address setup time 3
Address setup time 4
Address hold time 1
Address hold time 2
Address hold time 3
CS delay time 1
AS delay time
Bus Timing
V
T
T
a
a
CC
SS
= –20°C to +75°C (regular specifications),
= –40°C to +85°C (wide-range specifications)
NMI
IRQi*
(i = 0 to 11)
IRQ*
(edge input)
Note: * SSIER must be set to cancel software standby mode.
= AV
IRQ*
(level input)
= 3.0 V to 3.6 V, AV
SS
= 0 V, Bφ = 8 MHz to 35 MHz,
Figure 22.7 Interrupt Input Timing
Symbol
t
t
t
t
t
t
t
t
t
t
AD
AS1
AS2
AS3
AS4
AH1
AH2
AH3
CSD1
ASD
CC
= 3.0 V to 3.6 V, V
Min.
0.5 × t
1.0 × t
1.5 × t
2.0 × t
0.5 × t
1.0 × t
1.5 × t
cyc
cyc
cyc
cyc
cyc
cyc
cyc
– 8
– 8
– 8
– 8
– 8
– 8
– 8
t
t
t
IRQS
IRQS
NMIS
t
t
IRQW
NMIW
t
t
IRQH
NMIH
Max.
15
15
15
ref
Rev. 2.00 Jun. 28, 2007 Page 821 of 864
= 3.0 V to AV
Section 22 Electrical Characteristics
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
,
REJ09B0341-0200
Test
Conditions
Figures 22.8 to
22.20

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