DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 677

IC H8SX/1657 MCU FLASH 120TQFP

DF61657CN35FTV

Manufacturer Part Number
DF61657CN35FTV
Description
IC H8SX/1657 MCU FLASH 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of DF61657CN35FTV

Core Processor
H8SX
Core Size
32-Bit
Speed
35MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
82
Program Memory Size
768KB (768K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
3DK1657 - DEV EVAL KIT FOR H8SX/1657
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
DF61657CN35FTV
Manufacturer:
RENESAS
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Part Number:
DF61657CN35FTV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
The flash memory has the following features. Figure 18.1 is a block diagram of the flash memory.
18.1
• Size
• Two memory MATs
• Programming/erasing interface by the download of on-chip program
• Programming/erasing time
• Number of programming
• Three on-board programming modes
• Off-board programming mode
H8SX/1657C
H8SX/1656C
The start addresses of two memory spaces (memory MATs) are allocated to the same address.
The mode setting in the initiation determines which memory MAT is initiated first. The
memory MATs can be switched by using the bank-switching method after initiation.
 User MAT initiated at a power-on reset in user mode: 768 Kbytes/512 Kbytes
 User boot MAT is initiated at a power-on reset in user boot mode: 8 Kbytes
This LSI has a programming/erasing program. After downloading this program to the on-chip
RAM, programming/erasing can be performed by setting the parameters.
Programming time: 1 ms (typ) for 128-byte simultaneous programming, 8 µs per byte
Erasing time: 750 ms (typ) per 1 block (64 Kbytes)
The number of programming can be up to 100 times at the minimum. (1 to 100 times are
guaranteed.)
Boot mode: Using the on-chip SCI_4, the user MAT and user boot MAT can be
programmed/erased. In boot mode, the bit rate between the host and this LSI can be adjusted
automatically.
User program mode: Using a desired interface, the user MAT can be programmed/erased.
User boot mode: Using a desired interface, the user boot program can be made and the user
MAT can be programmed/erased.
Programmer mode: Using a PROM programmer, the user MAT and user boot MAT can be
programmed/erased.
Section 18 Flash Memory (0.18-µm F-ZTAT Version)
Product Classification
Features
R5F61657C
R5F61656C
ROM Size
768 Kbytes
512 Kbytes
Section 18 Flash Memory (0.18-µm F-ZTAT Version)
ROM Address
H'000000 to H'0BFFFF (modes 1, 2, 6, and 7)
H'000000 to H'07FFFF (modes 1, 2, 6, and 7)
Rev. 2.00 Jun. 28, 2007 Page 651 of 864
REJ09B0341-0200

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