DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 683

• Manufacturer Part Number: DF61657CN35FTV
• Description: IC H8SX/1657 MCU FLASH 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of DF61657CN35FTV

• Core Processor: H8SX
• Core Size: 32-Bit
• Speed: 35MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: 3DK1657 - DEV EVAL KIT FOR H8SX/1657
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

18.4.2
Figure 18.4 (2) shows the block structure of the 512-Kbyte user MAT. The heavy-line frames
indicate the erase blocks. The thin-line frames indicate the programming units and the values
inside the frames stand for the addresses. The user MAT is divided into seven 64-Kbyte blocks,
one 32-Kbyte block, and eight 4-Kbyte blocks. The user MAT can be erased in these divided
block units. Programming is done in 128-byte units starting from where the lower address is H'00
or H'80. RAM emulation can be performed in the eight 4-Kbyte blocks.
EB0
Erase unit: 4 Kbytes
EB1
Erase unit: 4 Kbytes
EB2
Erase unit: 4 Kbytes
EB3
Erase unit: 4 Kbytes
EB4
Erase unit: 4 Kbytes
EB5
Erase unit: 4 Kbytes
EB6
Erase unit: 4 Kbytes
EB7
Erase unit: 4 Kbytes
EB8
Erase unit: 32 Kbytes
EB9
Erase unit: 64 Kbytes
EB10
EB15
Erase unit: 64 Kbytes
Block Diagram of H8SX/1656C
Figure 18.4 User MAT Block Structure of H8SX/1656C (2)
H'0AFF80 H'0AFF81 H'0AFF82
H'000F80 H'000F81 H'000F82
H'001F80 H'001F81 H'001F82
H'002F80 H'002F81 H'002F82
H'003F80 H'003F81 H'003F82
H'004F80 H'004F81 H'004F82
H'005F80 H'005F81 H'005F82
H'006F80 H'006F81 H'006F82
H'007F80 H'007F81 H'007F82
H'00FF80 H'00FF81 H'00FF82
H'01FF80 H'01FF81 H'01FF82
H'07FF80 H'07FF81 H'07FF82
H'000000 H'000001 H'000002
H'001000 H'001001 H'001002
H'002000 H'002001 H'002002
H'003000 H'003001 H'003002
H'004000 H'004001 H'004002
H'005000 H'005001 H'005002
H'006000 H'006001 H'006002
H'007000 H'007001 H'007002
H'008000 H'008001 H'008002
H'010000 H'010001 H'010002
H'020000 H'020001 H'020002
H'070000 H'070001 H'070002
Section 18 Flash Memory (0.18-µm F-ZTAT Version)
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
←Programming unit: 128 bytes→
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Rev. 2.00 Jun. 28, 2007 Page 657 of 864
REJ09B0341-0200
H'0AFFFF
H'000FFF
H'001FFF
H'002FFF
H'003FFF
H'004FFF
H'005FFF
H'006FFF
H'007FFF
H'00FFFF
H'01FFFF
H'07FFFF
H'00007F
H'00107F
H'00207F
H'00307F
H'00407F
H'00507F
H'00607F
H'00707F
H'00807F
H'01007F
H'02007F
H'07007F