DF61657CN35FTV Renesas Electronics America, DF61657CN35FTV Datasheet - Page 224

• Manufacturer Part Number: DF61657CN35FTV
• Description: IC H8SX/1657 MCU FLASH 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of DF61657CN35FTV

• Core Processor: H8SX
• Core Size: 32-Bit
• Speed: 35MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: 3DK1657 - DEV EVAL KIT FOR H8SX/1657
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.8.4
The number of access cycles in the initial cycle (full access) on the burst ROM interface is
determined by the basic bus interface settings in ABWCR, ASTCR, WTCRA, WTCRB, and bits
CSXHn in CSACR (n = 0 to 7). When area 0 or area 1 designated as burst ROM space is read by
the CPU, the settings in RDNCR and bits CSXTn in CSACR (n = 0 to 7) are ignored.
From one to eight cycles can be selected for the burst cycle, according to the settings of bits
BSTS02 to BSTS00 and BSTS12 to BSTS10 in BROMCR. Wait cycles cannot be inserted. In
addition, 4-word, 8-word, 16-word, or 32-word consecutive burst access can be performed
according to the settings of BSTS01, BSTS00, BSTS11, and BSTS10 bits in BROMCR.
The basic access timing for burst ROM space is shown in figures 6.28 and 6.29.
Rev. 2.00 Jun. 28, 2007 Page 198 of 864
REJ09B0341-0200
Bφ
Upper
address bus
Lower
address bus
CSn
AS
RD
Data bus
BS
RD/WR
Note: n = 1, 0
Figure 6.28 Example of Burst ROM Access Timing (ASTn = 1, Two Burst Cycles)
Basic Timing
T
1
Full access
T
2
T
3
T
1
T
Burst access
2
T
1
T
2