MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 87

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Figure 49:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
x4: A0-A9, A11
COMMAND
x16: A9, A11
x16: A0-A8
x8: A0-A9
BA0, BA1
Case 1:
Case 2:
x8: A11
DQS
DQ
DQS
DQ
CK#
CKE
A10
DM
CK
1
1
5
t
t
AC (MIN) and
AC (MAX) and
Bank Read - Without Auto Precharge
t
t
IS
IS
NOP 6
T0
t
t
Notes: 1. DOn = data-out from column n; subsequent elements are provided in the programmed
IH
t
IH
DQSCK (MIN)
t
DQSCK (MAX)
2. Burst length = 4 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T5.
5. PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address.
6. NOP commands are shown for ease of illustration; other commands may be valid at these
7. The PRECHARGE command can only be applied at T5 if
8. Refer to Figure 40 on page 77, Figure 41 on page 78, and Figure 42 on page 79 for
t
Bank x
t
IS
IS
ACT
RA
T1
RA
RA
order.
times.
detailed DQS and DQ timing.
t
t
IH
IH
t
CK
t
t
RAS 7
RCD
t
RC
NOP 6
T2
t
CH
t
CL
t
Bank x
READ 2
Col n
IS
3
T3
t
t
IH
LZ (MIN)
CL = 2
87
NOP 6
T4
t
RPRE
t
LZ (MIN)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RPRE
ALL BANKS
ONE BANK
Bank x 4
PRE
T5
128Mb: x4, x8, x16 DDR SDRAM
7
t
DO
DQSCK (MIN)
n
t
t
AC (MIN)
DQSCK
DO
t
n
AC (MAX)
T5n
t
(MAX)
DON’T CARE
RP
t
NOP 6
T6
RAS minimum is met.
t
HZ (MAX)
T6n
t
©2000 Micron Technology, Inc. All rights reserved.
RPST
t
RPST
Timing Diagrams
NOP 6
T7
TRANSITIONING DATA
Bank x
T8
ACT
RA
RA
RA