MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 56

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Table 16:
Figure 33:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
Parameter/Condition
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Transmitter
AC Input Operating Conditions
0°C ≤ T
Notes appear on page 69-74
Input Voltage Waveform
A
≤ +70°C; V
DD
Q = V
between
V
V
V
V
DD
OL
DD
OH(MIN)
1.560V
1.400V
1.300V
1.275V
1.250V
1.225V
1.200V
1.100V
0.940V
SS
V
IN
Q
System Noise Margin (Power/Ground,
Crosstalk, Signal Integrity Attenuation)
Q (2.3V minimum)
(MAX) (0.83V
= +2.5V ±0.2V (V
AC - Provides margin
V
(1.670V
OL
SSTL2 termination)
(MAX)
Symbol
V
V
V
1
REF
2
IH
IL
for SSTL2 termination)
and
for
(
(
AC
(
AC
AC
V
)
)
)
IL AC
56
DD
Q = V
DD
V
0.49 x V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
REF
= +2.6V ±0.1V for DDR400); notes: 1–5, 16
Min
+ 0.310
-
DD
128Mb: x4, x8, x16 DDR SDRAM
Q
NOTE: 1. V
0.51 x V
V
2. V
3. For non-DDR400 devices, numbers in
REF
diagram reflect nomimal values utilizing
circuit below.
Max
OH
OL
- 0.310
Receiver
-
(MAX) with test load is 0.373V
(MIN) with test load is 1.927V
DD
25
©2000 Micron Technology, Inc. All rights reserved.
Q
V
TT
Parameter Tables
25
Units
V
V
V
Reference
Point
V
V
V
V
V
V
V
V
14, 28, 8
14, 28, 8
IH
IH
REF
REF
REF
REF
IL
IL
Notes
DC
AC
AC
DC
+AC Noise
+DC Error
-DC Error
-AC Noise
6