MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 41

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Figure 25:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE to READ - Uninterrupting
Bank a,
WRITE
Col b
T0
Notes: 1. DI b = data-in for column b, DO n = data-out for column n.
t
t
t
DQSS
DQSS
DQSS
2. Three subsequent elements of data-in are applied in the programmed order following DI
3. An uninterrupted burst of 4 is shown.
4.
5. The READ and WRITE commands are to same device. However, the READ and WRITE com-
6. A10 is LOW with the WRITE command (auto precharge is disabled).
DI
b.
t
mands may be to different devices, in which case
mand could be applied earlier.
b
WTR is referenced from the first positive CK edge after the last data-in pair.
NOP
T1
DI
b
DI
b
T1n
NOP
T2
T2n
41
T3
NOP
t
WTR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank a,
READ
Col n
T4
128Mb: x4, x8, x16 DDR SDRAM
DON’T CARE
t
WTR is not required and the READ com-
CL = 2
CL = 2
CL = 2
T5
NOP
©2000 Micron Technology, Inc. All rights reserved.
TRANSITIONING DATA
T6
NOP
Operations
DO
DO
DO
n
n
n
T6n