MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 80

IC DDR SDRAM 128MBIT 6NS 66TSOP

MT46V32M4TG-6T:D TR

Manufacturer Part Number
MT46V32M4TG-6T:D TR
Description
IC DDR SDRAM 128MBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46V32M4TG-6T:D TR

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
128M (32Mx4)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1024-2
Figure 43:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
Data Input Timing
Notes: 1.
DQS
CK#
DM
DQ
CK
2.
3. WRITE command issued at T0.
4. For x16, LDQS controls the lower byte and UDQS controls the upper byte.
t
t
DSH (MIN) generally occurs during
DSS (MIN) generally occurs during
T0
t DQSS
3
t WPRES
t DS
t WPRE
T1
DI
b
t DSH 1
t DH
T1n
80
t DQSL
t DSS 2
T2
Output Drive Characteristics and Timing
t DQSH t WPST
t
t
t DSH 1
DQSS (MAX).
DQSS (MIN).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2n
t DSS 2
TRANSITIONING DATA
DON’T CARE
128Mb: x4, x8, x16 DDR SDRAM
T3
©2000 Micron Technology, Inc. All rights reserved.

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