MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 55

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Table 15:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
Parameter/Condition
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V ≤ VOUT ≤
OUTPUT LEVELS: Full drive option - x4, x8, x16
High Current (V
minimum V
Low Current (V
maximum V
OUTPUT LEVELS: Reduced drive option - x16 only
High Current (V
minimum V
Low Current (V
maximum V
TT
TT
TT
TT
DC Electrical Characteristics and Operating Conditions (-5B DDR400)
0°C ≤ T
)
)
)
)
OUT
OUT
OUT
OUT
IN
≤ V
= 0.373V, maximum V
= 0.763V, maximum V
A
= V
= V
≤ +70°C; V
DD
DD
DD
, V
Q - 0.373V, minimum V
Q - 0.763V, minimum V
REF
PIN 0V ≤ VIN ≤ 1.35V
V
DD
DD
Q = +2.6V ±0.1V, V
Q
)
REF
REF
,
,
REF
REF
DD
,
,
= +2.6V ±0.1V; notes: 1–5, 16, and 21; Notes appear on page 69-74
55
Symbol
V
V
V
V
I
V
IH
I
IL
V
I
DD
I
I
OHR
OLR
OH
OZ
REF
OL
I
DD
(
(
TT
I
DC
DC
Q
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.49 x V
V
V
REF
REF
-16.8
Min
16.8
-0.3
2.5
2.5
-2
-5
-9
+ 0.15
9
- 0.04
128Mb: x4, x8, x16 DDR SDRAM
DD
Q
0.51 x V
V
V
V
REF
REF
DD
Max
2.7
2.7
+ 0.04
2
5
- 0.15
+ 0.3
-
-
-
-
©2000 Micron Technology, Inc. All rights reserved.
DD
Parameter Tables
Q
Units
mA
mA
mA
mA
µA
µA
V
V
V
V
V
V
11 ,9, 12,
11, 9,
Notes
6, 12
7, 12
12, 7
6, 7
20
28
28
20