MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 40

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Figure 24:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
COMMAND
ADDRESS
Random WRITE Cycles
DQS
CK#
DM
DQ
CK
Notes: 1. DI b, etc. = data-in for column b, etc.
WRITE
Bank,
Col b
T0
2. b', etc. = the next data-in following DI b, etc., according to the programmed burst order.
3. Programmed burst length = 2, 4, or 8 in cases shown.
4. Each WRITE command may be to any bank.
t
DQSS (NOM)
WRITE
Bank,
Col x
T1
DI
b
T1n
DI
b'
WRITE
Bank,
Col n
T2
DI
x
40
T2n
DI
x'
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
Bank,
Col a
T3
DI
n
DON’T CARE
T3n
128Mb: x4, x8, x16 DDR SDRAM
DI
n'
WRITE
Bank,
Col g
T4
DI
a
TRANSITIONING DATA
T4n
DI
a'
©2000 Micron Technology, Inc. All rights reserved.
T5
NOP
DI
g
T5n
DI
g'
Operations