MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 66

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Table 28:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
AC Characteristics
Parameter
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data Hold Skew Factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window (DVW)
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Electrical Characteristics and Recommended AC Operating Conditions (-6/-6T/-75E)
Notes: 1–5, 14–17, 8; notes appear on page 69-74; 0°C ≤ T
DD
CL=2.5
CL=2
Symbol
t
t
t
CK (2.5)
t
t
t
t
t
DQSCK
WPRES
t
t
t
t
t
t
t
t
CK (2)
DQSQ
t
t
DQSH
t
WPRE
WPST
DIPW
DQSL
DQSS
t
t
t
t
t
t
XSNR
XSRD
t
t
t
t
RPRE
MRD
RPST
t
REFC
t
t
WTR
t
t
DSH
t
t
QHS
RCD
RRD
N/A
REFI
VTD
t
t
t
t
t
IPW
RAS
RAP
t
t
t
DSS
t
RFC
WR
DH
IH
IH
QH
AC
CH
HP
HZ
CL
DS
IS
IS
RC
RP
LZ
66
F
S
F
S
t
CH,
-
t
-0.70
Min
0.45
0.45
0.45
0.45
1.75
0.35
0.35
0.75
0.75
0.75
t
0.25
-6 (FBGA)
-0.6
-0.7
QH -
200
t
7.5
0.2
0.2
0.8
0.8
2.2
QHS
0.9
0.4
0.4
12
42
15
60
72
15
15
12
15
75
HP
6
0
1
0
t
CL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
A
t
DQSQ
70,000
≤ +70°C; V
+0.70
140.6
Max
+0.6
+0.7
0.55
0.55
1.25
15.6
0.4
0.5
1.1
0.6
0.6
13
13
128Mb: x4, x8, x16 DDR SDRAM
t
CH,
-
-0.70
t
Min
-6T (TSOP)
0.45
0.45
0.45
0.45
1.75
0.35
0.35
0.75
0.75
0.75
t
0.25
-0.6
-0.7
200
t
QH -
0.2
0.2
0.8
0.8
2.2
0.9
0.4
0.4
7.5
QHS
60
15
12
42
15
72
15
12
15
75
HP
6
0
1
0
DD
t
CL
Q = +2.5V ±0.2V, V
t
DQSQ
70,000
+0.70
Max
140.6
+0.6
+0.7
0.55
0.55
0.45
1.25
0.55
15.6
1.1
0.6
0.6
13
13
t
CH,
-
-0.75
Min
-0.75
-0.75
©2000 Micron Technology, Inc. All rights reserved.
0.45
0.45
1.75
0.35
0.35
0.75
t
0.25
t
200
t
7.5
7.5
0.5
0.5
0.2
0.2
.90
.90
2.2
QHS
0.9
0.4
0.4
QH -
15
40
15
60
75
15
15
15
15
75
HP
1
1
0
1
0
t
CL
Parameter Tables
-75E
t
120,000
DQSQ
+0.75
+0.75
+0.75
140.6
Max Units Notes
0.55
0.55
1.25
0.75
15.6
0.5
1.1
0.6
0.6
13
13
DD
= +2.5V ±0.2V
t
t
t
t
t
t
t
t
t
t
t
t
t
ns
CK
CK
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
13, 19
13, 19
25, 26
25, 26
10, 21
20, 21
18,10
18,10
26, 6
26, 6
14
14
17
11
11
19
25
23
23
5
5
6
9