MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 79

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Figure 42:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
All DQ values, collectively
DQS, or LDQS/UDQS
DQ (Last data valid)
DQ (First data valid)
Data Output Timing –
Notes: 1.
CK#
CK
3
2
T0
2. DQ transitioning after DQS transition define
3. All DQ must transition by
4.
5.
6.
7. READ command with CL = 2 issued at T0.
7
t
DQS skew.
t
skew.
t
t
DQSCK is the DQS output window relative to CK and is the “long term” component of
AC is the DQ output window relative to CK, and is the “long term” component of DQ
LZ (MIN) and
HZ (MAX),and
t LZ (MIN)
t
T1
AC and
t
t LZ (MIN)
AC (MIN) are the first valid signal transition.
t
t RPRE
AC (MAX) are the latest valid signal transition.
t
DQSCK
T2
t DQSCK
t DQSCK
t
DQSQ after DQS transitions, regardless of
T2
T2
79
T2
T2n
1
1
(MIN)
(MAX)
Output Drive Characteristics and Timing
T2n
T2n
T2n
t AC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
4
T3
(MIN)
T3
T3
T3
T3n
t
DQSQ window.
128Mb: x4, x8, x16 DDR SDRAM
T3n
T3n
T3n
t AC
T4
4
(MAX)
T4
T4
T4
T4n
t DQSCK
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t DQSCK
T4n
T4n
T4n
T5
1
(MAX)
1
t
AC.
(MIN)
T5
T5
T5
t HZ (MAX)
T5n
t HZ(MAX)
t RPST
T5n
T5n
T5n
T6