MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 33

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Figure 18:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
READ to WRITE
DQS
DQS
DQS
CK#
DM
CK#
DM
CK#
DM
DQ
DQ
DQ
CK
CK
CK
Notes: 1. DO n = data-out from column n.
Bank a,
Bank a,
READ
Bank,
READ
READ
Col n
Col n
Col n
T0
T0
T0
2. DI b = data-in from column b.
3. Burst length = 4 in the cases shown (applies for bursts of 8 as well; if the burst length is 2,
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal
7. BST = BURST TERMINATE command, page remains open.
the BST command shown can be NOP).
CL = 2
CL = 2.5
BST
BST
BST
T1
T1
T1
7
7
7
CL = 3
t
AC,
NOP
NOP
NOP
T2
T2
T2
t
DQSCK, and
33
DO
n
T2n
T2n
DO
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
Bank,
Col b
T3
T3
NOP
T3
NOP
DON’T CARE
t
t
(NOM)
DQSQ.
DQSS
DO
n
T3n
T3n
128Mb: x4, x8, x16 DDR SDRAM
WRITE
WRITE
Bank,
Bank,
Col b
T4
T4
Col b
T4
NOP
DI
b
TRANSITIONING DATA
t
(NOM)
t
(NOM)
DQSS
DQSS
T4n
©2000 Micron Technology, Inc. All rights reserved.
T5
T5
T5
NOP
NOP
NOP
DI
DI
b
b
T5n
T5n
T5n
Operations