MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 67

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Table 29:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
AC Characteristics
Parameter
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data Hold Skew Factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window (DVW)
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Electrical Characteristics and Recommended AC Operating Conditions (-75Z/-75)
Notes: 1–5, 14–17, 8; notes appear on page 69-74; 0°C ≤ T
DD
CL=2.5
CL=2
67
Symbol
t
t
t
CK (2.5)
t
t
DQSCK
t
t
t
t
t
WPRES
t
t
t
t
t
t
t
CK (2)
DQSH
DQSQ
WPRE
t
t
t
t
t
WPST
t
t
DIPW
DQSL
DQSS
t
t
t
XSNR
XSRD
t
MRD
t
RPRE
REFC
RPST
t
WTR
t
t
t
t
N/A
t
t
DSH
t
t
QHS
RAP
RCD
RRD
REFI
VTD
t
t
t
IPW
RAS
t
t
t
DSS
t
RFC
WR
QH
AC
CH
DH
IH
IH
DS
HP
HZ
RC
CL
LZ
IS
IS
RP
F
S
F
S
Micron Technology, Inc., reserves the right to change products or specifications without notice.
A
t
CH,
-
-0.75
-0.75
-0.75
Min
≤ +70°C; V
t
0.45
0.45
1.75
0.35
0.35
0.75
0.25
t
200
t
7.5
7.5
0.5
0.5
0.2
0.2
.90
.90
2.2
QHS
0.9
0.4
0.4
15
40
20
65
75
20
20
15
15
75
HP
QH -
1
1
0
1
0
t
CL
-75Z
128Mb: x4, x8, x16 DDR SDRAM
t
DQSQ
120,000
+0.75
+0.75
+0.75
140.6
Max
0.55
0.55
1.25
0.75
15.6
0.5
1.1
0.6
0.6
13
13
DD
Q = +2.5V ±0.2V, V
t
CH,
-
-0.75
-0.75
-0.75
Min
0.45
0.45
1.75
0.35
0.35
0.75
t
0.25
200
t
7.5
0.5
0.5
0.2
0.2
.90
.90
2.2
0.9
0.4
0.4
t
QHS
10
15
40
20
65
75
20
20
15
15
75
HP
QH -
1
1
0
1
0
t
CL
-75
©2000 Micron Technology, Inc. All rights reserved.
t
120,000
DQSQ
+0.75
+0.75
+0.75
140.6
Max
0.55
0.55
1.25
0.75
15.6
Parameter Tables
0.5
1.1
0.6
0.6
13
13
DD
Units
= +2.5V ±0.2V
t
t
t
t
t
t
t
t
t
t
t
t
t
ns
CK
CK
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
Notes
13, 19
13, 19
25, 26
18, 10
18, 10
25, 26
20, 21
26, 6
26, 6
14
14
10
17
11
11
19
25
23
23
5
5
6
9