MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 30

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Figure 15:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
COMMAND
COMMAND
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Nonconsecutive READ Bursts
Notes: 1. DO n (or b) = data-out from column n (or column b).
READ
Bank,
READ
Bank,
READ
Bank,
Col n
Col n
Col n
T0
T0
T0
2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order fol-
5. Shown with nominal
first).
lowing DO b.
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
CL = 3
NOP
NOP
NOP
T2
T2
T2
t
AC,
DO
n
t
DQSCK, and
T2n
T2n
30
DO
n
READ
Bank,
READ
Bank,
READ
Bank,
Col b
Col b
Col b
T3
T3
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DO
n
t
DQSQ.
T3n
T3n
T3n
DON’T CARE
128Mb: x4, x8, x16 DDR SDRAM
T4
T4
NOP
NOP
T4
NOP
T4n
TRANSITIONING DATA
T5
T5
T5
©2000 Micron Technology, Inc. All rights reserved.
NOP
NOP
NOP
DO
b
T5n
T5n
DO
b
Operations
T6
T6
NOP
NOP
T6
NOP
DO
b