HD6417750RF240DV Renesas Electronics America, HD6417750RF240DV Datasheet - Page 490

MPU 3V 16K I-TEMP,PB-FREE 208-QF

HD6417750RF240DV

Manufacturer Part Number
HD6417750RF240DV
Description
MPU 3V 16K I-TEMP,PB-FREE 208-QF
Manufacturer
Renesas Electronics America
Series
SuperH® SH7750r
Datasheet

Specifications of HD6417750RF240DV

Core Processor
SH-4
Core Size
32-Bit
Speed
240MHz
Connectivity
EBI/EMI, FIFO, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
28
Program Memory Type
ROMless
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
1.4 V ~ 1.6 V
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
208-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417750RF240DV
Manufacturer:
HITACHI
Quantity:
7 287
Section 13 Bus State Controller (BSC)
Bits 17 and 16—RAS-CAS Delay (RCD1, RCD0): When the DRAM interface is set, these bits
set the RAS-CAS assertion delay time. When the synchronous DRAM interface is set, these bits
set the bank active-read/write command delay time.
Bit 17: RCD1
0
1
Note:
Bits 15 to 13—Write Precharge Delay (TRWL2–TRWL0): These bits set the synchronous
DRAM write precharge delay time. In auto-precharge mode, they specify the time until the next
bank active command is issued after a write cycle. After a write cycle, the next active command is
not issued for a period equivalent to the setting values of the TPC[2:0] and TRWL[2:0] bits.*
After a write cycle, the next precharge command is not issued for a period of TRWL. This setting
is valid only when synchronous DRAM interface is set.
Note: * For setting values and the period during which no command is issued, see 22.3.3, Bus
Bit 15: TRWL2
0
1
Note:
Rev.7.00 Oct. 10, 2008 Page 404 of 1074
REJ09B0366-0700
*
*
Timing.
Inhibited in RAS down mode.
Inhibited in RAS down mode.
Bit 16: RCD0
0
1
0
1
Bit 14: TRWL1
0
1
0
1
DRAM
2 cycles
3 cycles
4 cycles
5 cycles
Bit 13: TRWL0
0
1
0
1
0
1
0
1
Write Precharge ACT Delay Time
1 (Initial value)
2
3*
4*
5*
Reserved (Setting prohibited)
Reserved (Setting prohibited)
Reserved (Setting prohibited)
Description
Synchronous DRAM
Reserved (Setting prohibited)
2 cycles
3 cycles
4 cycles*

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