DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 745
![MCU 3V 256K PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3026X25V
Manufacturer Part Number
DF3026X25V
Description
MCU 3V 256K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3026X25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3026X25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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FLMCR (FLMCR1)—Flash Memory Control Register
Modes 1 to
4, and 6
Modes 5
and 7
Flash write enable bit
Note: * Fix the FWE pin low in mode 6.
0
1
Initial value
Read/Write
Initial value
Read/Write
When a low level is input to the FWE pin (hardware protection state)*
When a high level is input to the FWE pin
H8/3024F-ZTAT
H8/3026F-ZTAT
H8/3024 mask ROM version
H8/3026 mask ROM version
Software write enable bit
0
1
Bit
Write/erase disabled (Initial value)
Write/erase enabled
[Setting condition]
When FWE = 1
Erase setup
FWE
0
1
1/0
R
R
7
0
Erase setup cleared (Initial value)
Erase setup
[Setting condition]
When FWE = 1 and SWE = 1
SWE
R/W
Program setup
R
6
0
0
0
1
Program setup cleared (Initial value)
Program setup
[Setting condition]
When FWE = 1 and SWE = 1
ESU
Erase-verify mode
R/W
This register provided
This register provided (FLMCR1)
This register not provided
R
5
0
0
0
1
Erase-verify mode cleared (Initial value)
Transition to erase-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Program-verify mode
PSU
R/W
R
4
0
0
0
1
Program-verify mode cleared (Initial value)
Transition to program-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Erase mode
R/W
0
1
EV
R
3
0
0
Erase mode cleared (Initial value)
Transition to erase mode
[Setting condition]
When FWE = 1, SWE = 1, and ESU = 1
Rev. 2.00 Sep 20, 2005 page 705 of 800
R/W
PV
R
2
0
0
Program mode
0
1
Appendix B Internal I/O Registers
Program mode cleared (Initial value)
Transition to program mode
[Setting condition]
When FWE = 1, SWE = 1, and PSU = 1
R/W
E
R
1
0
0
H'EE030
R/W
P
R
0
0
0
REJ09B0260-0200
Flash Memory
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