DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 561
![MCU 3V 256K PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3026X25V
Manufacturer Part Number
DF3026X25V
Description
MCU 3V 256K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3026X25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3026X25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 561 of 843
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3. FWE application/disconnection
FWE application should be carried out when MCU operation is in a stable condition. If MCU
operation is not stable, fix the FWE pin low and set the protection state.
The following points must be observed concerning FWE application and disconnection to
prevent unintentional programming or erasing of flash memory:
• Apply FWE when the V
• Apply FWE when oscillation has stabilized (after the elapse of the oscillation settling
• In boot mode, apply and disconnect FWE during a reset.
• In user program mode, FWE can be switched between high and low level regardless of
• Do not apply FWE if program runaway has occurred.
• Disconnect FWE only when the SWE, ESU, PSU, EV, PV, E, and P bits in FLMCR1 are
If FWE is applied when the MCU’s V
MCU operation will be unstable and flash memory may be erroneously programmed or
erased.
time).
When V
settling time before applying FWE. Do not apply FWE when oscillation has stopped or is
unstable.
In a transition to boot mode, FWE = 1 input and MD
while the
programming setup time (t
transition from boot mode to another mode, also, a mode programming setup time is
necessary with respect to the reset release timing.
In a reset during operation, the
clock cycles.
R E S
FWE input can also be switched during execution of a program in flash memory.
During FWE application, the program execution state must be monitored using the
watchdog timer or some other means.
cleared.
Make sure that the SWE, ESU, PSU, EV, PV, E, and P bits are not set by mistake when
applying or disconnecting FWE.
input.
CC
R E S
power is turned on, hold the
input is low. FWE and MD
CC
MDS
voltage has stabilized within its rated voltage range.
) with respect to the reset release timing. When making a
R E S
pin must be held low for a minimum of 20 system
CC
Section 17 Flash Memory [H8/3026F-ZTAT Version]
R E S
power supply is not within its rated voltage range,
2
–MD
pin low for the duration of the oscillation
0
pin input must satisfy the mode
Rev. 2.00 Sep 20, 2005 page 521 of 800
2
–MD
0
setting should be performed
REJ09B0260-0200
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