DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 582

• Manufacturer Part Number: DF3026X25V
• Description: MCU 3V 256K PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3026X25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 18 Flash Memory [H8/3024F-ZTAT Version]
State transitions between the normal and user modes and on-board programming mode are
performed by changing the FWE pin level from high to low or from low to high. To prevent
misoperation (erroneous programming or erasing) in these cases, the bits in the flash memory
control register (FLMCR1) should be cleared to 0 before making such a transition. After the bits
are cleared, a wait time is necessary. Normal operation is not guaranteed if this wait time is
insufficient.
Rev. 2.00 Sep 20, 2005 page 542 of 800
REJ09B0260-0200
Notes: Only make a transition between user mode and user program mode when the CPU is not
with on-chip ROM
accessing the flash memory.
1. RAM emulation possible
2. The H8/3024F-ZTAT version is placed in PROM mode by means of a dedicated PROM
3. MD
4. MD
5. MD
User mode
enabled
writer.
FWE = 0
FWE = 1
FWE = 1
*4
*1
2
2
2
, MD
, MD
, MD
On-board programming mode
FWE = 0
User program
1
1
1
, MD
, MD
, MD
Figure 18.3 Flash Memory Related State Transitions
mode
0
0
0
= (1, 0, 1) (1, 1, 0) (1, 1, 1)
= (1, 0, 1) (1, 1, 1)
(0, 0, 1) (0, 1, 1)
*3
RES = 0
*1
*4
RES = 0
Reset state
Boot mode
*5
RES = 0
*2
RES = 0
PROM mode