DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 541
![MCU 3V 256K PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3026X25V
Manufacturer Part Number
DF3026X25V
Description
MCU 3V 256K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3026X25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3026X25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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17.6
A software method, using the CPU, is employed to program and erase flash memory in the on-
board programming modes. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes for addresses
H'000000 to H'03FFFF are made by setting the PSU, ESU, P, E, PV, and EV bits in FLMCR1.
The flash memory cannot be read while being programmed or erased. Therefore, the program
(user program) that controls flash memory programming/erasing should be located and executed in
on-chip RAM or external memory.
See section 17.11, Flash Memory Programming and Erasing Precautions, for points to be noted
when programming or erasing the flash memory. In the following operation descriptions, wait
times after setting or clearing individual bits in FLMCR1 are given as parameters; for details of
the wait times, see section 21.2.6, Flash Memory Characteristics.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, ESU, PSU, EV, PV, E, and
2. When programming or erasing, set FWE to 1 (programming/erasing will not be
3. Programming must be executed in the erased state. Do not perform additional
Flash Memory Programming/Erasing
P bits in FLMCR1 is executed by a program in flash memory.
executed if FWE = 0).
programming on addresses that have already been programmed.
Section 17 Flash Memory [H8/3026F-ZTAT Version]
Rev. 2.00 Sep 20, 2005 page 501 of 800
REJ09B0260-0200
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