DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 539
![MCU 3V 256K PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3026X25V
Manufacturer Part Number
DF3026X25V
Description
MCU 3V 256K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3026X25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3026X25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 539 of 843
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Notes: 1. Mode pin and FWE pin input must satisfy the mode programming setup time (t
17.5.2
When set to user program mode, the H8/3026F-ZTAT version can program and erase its flash
memory by executing a user program/erase control program. Therefore, on-board reprogramming
of the on-chip flash memory can be carried out by providing on-board means of FWE control and
supply of programming data, and storing a program/erase control program in part of the program
area as necessary.
To select user program mode, select a mode that enables the on-chip ROM (mode 5 or 7), and
apply a high level to the FWE pin. In this mode, on-chip supporting modules other than flash
memory operate as they normally would in modes 5 and 7.
Flash memory programming/erasing should not be carried out in mode 6. When mode 6 is set, the
FWE pin must be driven low.
The flash memory itself cannot be read while being programmed or erased, so the program that
performs programming should be placed in external memory or transferred to RAM and executed
there.
Figure 17.8 shows the execution procedure when user program mode is entered during program
execution in RAM. It is also possible to start from user program mode in a reset-start.
2. For further information on FWE application and disconnection, see section 17.11,
3. See section 4.2.2, Reset Sequence, and section 17.11, Flash Memory Programming and
User Program Mode
with respect to the reset release timing.
Flash Memory Programming and Erasing Precautions.
Erasing Precautions. The H8/3026F-ZTAT version requires a minimum of 20 system
clock cycles for a reset during operation.
Section 17 Flash Memory [H8/3026F-ZTAT Version]
Rev. 2.00 Sep 20, 2005 page 499 of 800
REJ09B0260-0200
MDS
)
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