DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 603
![MCU 3V 256K PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3026X25V
Manufacturer Part Number
DF3026X25V
Description
MCU 3V 256K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3026X25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3026X25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 603 of 843
- Download datasheet (5Mb)
Section 18 Flash Memory [H8/3024F-ZTAT Version]
18.6.4
Erase-Verify Mode
In erase-verify mode, data is read after memory has been erased to check whether it has been
correctly erased.
After the elapse of the fixed erase time, clear the E bit in FLMCR1, then wait for at least (t
) µs
ce
before clearing the ESU bit to exit erase mode. After exiting erase mode, the watchdog timer
setting is also cleared. The operating mode is then switched to erase-verify mode by setting the
EV bit in FLMCR1. Before reading in erase-verify mode, a dummy write of H'FF data should be
made to the addresses to be read. The dummy write should be executed after the elapse of (t
) µs
sev
or more. When the flash memory is read in this state (verify data is read in 16-bit units), the data at
the latched address is read. Wait at least (t
) µs after the dummy write before performing this
sevr
read operation. If the read data has been erased (all 1), a dummy write is performed to the next
address, and erase-verify is performed. If the read data is unerased, set erase mode again, and
repeat the erase/erase-verify sequence as before. The maximum number of repetitions of the
erase/erase-verify sequence is indicated by the maximum erase count (N). When verification is
completed, exit erase-verify mode, and wait for at least (t
) µs. If erasure has been completed on
cev
all the erase blocks, clear the SWE bit in FLMCR1, and leave a wait time of at least (t
) µs.
cswe
If erasing multiple blocks, set a single bit in EBR for the next block to be erased, and repeat the
erase/erase-verify sequence as before.
Rev. 2.00 Sep 20, 2005 page 563 of 800
REJ09B0260-0200
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