DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 670
![MCU 3V 256K PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3026X25V
Manufacturer Part Number
DF3026X25V
Description
MCU 3V 256K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3026X25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3026X25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 21 Electrical Characteristics
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
Rev. 2.00 Sep 20, 2005 page 630 of 800
REJ09B0260-0200
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
3. Block erase time (Shows the total period for which the E-bit in FLMCR is set. It does not
4. To specify the maximum programming time (t
5. For the maximum erase time (t
6. Minimum number of times at which all characteristics are guaranteed after
7. Reference characteristics at 25 C. (This is an indication that reprogramming operations
8. Data retention characteristics when reprogramming is performed correctly within the
The wait time after P bit setting should be changed as follows according to the value of
erase/erase-verify flowchart.
memory control register (FLMCR) is set. It does not include the programming
verification time.)
include the erase verification time.)
flowchart, set the maximum value (1000) for the maximum programming count (N).
the programming counter (n).
wait time after E bit setting (t
To set the maximum erase time, the values of t
the above formula.
Examples: When t
reprogramming. (Reprogramming count from 1 to minimum value is guaranteed.)
can normally be performed up to this figure.)
specification values, including the minimum data retention period.
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
Programming counter (n) [in additional programming] = 1 to 6: t
t
E
(max) = Wait time after E bit setting (t
When t
se
se
= 100 [ms], N = 12 times
= 10 [ms], N = 120 times
se
) and the maximum erase count (N):
E
(max)), the following relationship applies between the
se
P
(max)) in the 128-byte programming
)
se
and N should be set so as to satisfy
maximum erase count (N)
t
t
sp30
sp200
sp10
= 30 µs
= 10 µs
= 200 µs
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