DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 669
![MCU 3V 256K PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3026X25V
Manufacturer Part Number
DF3026X25V
Description
MCU 3V 256K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3026X25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3026X25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 669 of 843
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21.2.6
Table 21.19 shows the flash memory characteristics.
Table 21.19 Flash Memory Characteristics
Conditions: V
Item
Programming time *
Erase time *
Reprogramming count
Data retention period
Programming Wait time after SWE bit setting *
Erase
Flash Memory Characteristics
1
*
3
T
*
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy write *
Wait time after PV bit clear *
Wait time after SWE bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy write *
Wait time after EV bit clear *
Wait time after SWE bit clear *
Maximum erase count *
5
a
CC
= 0°C to +75°C (operating temperature range for programming/erasing)
1
= 3.0 to 3.6 V, AV
*
2
*
4
1
*
5
CC
1
1
1
1
1
1
= 3.0 to 3.6 V, V
*
1
*
1
1
1
1
1
4
5
1
1
1
1
1
*
4
1
1
Symbol
t
t
N
t
t
t
t
t
t
t
t
t
t
t
t
N
t
t
t
t
t
t
t
t
t
N
P
E
DRP
sswe
spsu
sp30
sp200
sp10
cp
cpsu
spv
spvr
cpv
cswe
sswe
sesu
se
ce
cesu
sev
sevr
cev
cswe
WEC
Min
—
—
100*
10*
1
50
28
198
8
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
12
SS
Rev. 2.00 Sep 20, 2005 page 629 of 800
= AV
8
6
Section 21 Electrical Characteristics
Typ
10
100
10,000*
—
1
50
30
200
10
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
—
SS
= 0 V,
7
Max
200
1200
—
—
—
—
32
202
12
—
—
—
—
—
—
1000
—
—
100
—
—
—
—
—
—
120
Unit
ms/
128 bytes
ms/block
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
REJ09B0260-0200
Notes
Programming
time wait
Programming
time wait
Additional-
programming
time wait
Erase time
wait
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