DF3026X25V Renesas Electronics America, DF3026X25V Datasheet - Page 579

• Manufacturer Part Number: DF3026X25V
• Description: MCU 3V 256K PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3026X25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Table 18.4 Flash Memory Erase Blocks
Block (Size)
EB0 (1 kbyte)
EB1 (1 kbyte)
EB2 (1 kbyte)
EB3 (1 kbyte)
EB4 (28 kbytes)
EB5 (32 kbytes)
EB6 (32 kbytes)
EB7 (32 kbytes)
18.3.4
RAMCR selects the RAM area to be used when emulating real-time flash memory programming.
Note: * Cannot be set to 1 in mode 6.
Bits 7 to 4—Reserved: Read-only bits, always read as 1.
Modes 1
to 4
Modes 5
to 7
RAM Control Register (RAMCR)
Bit
Initial value
Read/Write
Initial value
Read/Write
—
—
—
7
1
1
Reserved bits
Address
H'000000–H'0003FF
H'000400–H'0007FF
H'000800–H'000BFF
H'000C00–H'000FFF
H'001000–H'007FFF
H'008000–H'00FFFF
H'010000–H'017FFF
H'018000–H'01FFFF
—
—
—
6
1
1
—
—
—
5
1
1
Section 18 Flash Memory [H8/3024F-ZTAT Version]
—
—
—
4
1
1
RAM select
Used together with bits 2 and 1 to select
a flash memory area
Rev. 2.00 Sep 20, 2005 page 539 of 800
RAMS
R/W *
R
3
0
0
RAM2, RAM1
Used together with bit 3 to select
a flash memory area
RAM2
R/W *
R
2
0
0
RAM1
R/W *
REJ09B0260-0200
R
1
0
0
Reserved bit
—
—
—
0
1
1